Sign In | Join Free | My portofva.com
China VBE Technology Shenzhen Co., Ltd. logo
VBE Technology Shenzhen Co., Ltd.
VBE TECHNOLOGY SHENZHEN CO., LTD Leading Intelligent RF Security Solutions Provider
Verified Supplier

8 Years

Home > RF Power Transistor >

Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz

VBE Technology Shenzhen Co., Ltd.
Trust Seal
Verified Supplier
Credit Check
Supplier Assessment
Contact Now

Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz

Brand Name : VBE

Model Number : VBE10R5

Certification : ISO

Place of Origin : CHINA

MOQ : 1pcs

Supply Ability : 10K

Delivery Time : 5-8 working days

Packaging Details : Neutral Packing

Condition : Brand New and Original

Contact Now

Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz

Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz

Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz

Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz

Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz

Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz

Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz


Product Tags:

high power rf transistor

      

high frequency power transistor

      
China Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz wholesale

Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz Images

Inquiry Cart 0
Send your message to this supplier
 
*From:
*To: VBE Technology Shenzhen Co., Ltd.
*Subject:
*Message:
Characters Remaining: (0/3000)