Sign In | Join Free | My portofva.com
China VBE Technology Shenzhen Co., Ltd. logo
VBE Technology Shenzhen Co., Ltd.
VBE TECHNOLOGY SHENZHEN CO., LTD Leading Intelligent RF Security Solutions Provider
Verified Supplier

8 Years

Home > RF Power Transistor >

DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors

VBE Technology Shenzhen Co., Ltd.
Trust Seal
Verified Supplier
Credit Check
Supplier Assessment
Contact Now

DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors

Brand Name : VBE

Model Number : VBE6006H

Certification : ISO

Place of Origin : CHINA

MOQ : 1pcs

Supply Ability : 10K

Delivery Time : 5-8 working days

Packaging Details : Neutral Packing

Condition : Brand New and Original

Contact Now

DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors

DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors

DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors


Product Tags:

high frequency power transistor

      

rf power amplifier transistor

      

60W RF Power Transistor

      
China DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors wholesale

DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors Images

Inquiry Cart 0
Send your message to this supplier
 
*From:
*To: VBE Technology Shenzhen Co., Ltd.
*Subject:
*Message:
Characters Remaining: (0/3000)